Highly Efficient Copper-Zinc-Tin-Selenide (CZTSe) Solar Cells by Electrodeposition
- Highly Efficient Copper-Zinc-Tin-Selenide (CZTSe) Solar Cells by Electrodeposition
- 전종옥; 이기두; 오이슬; 서세원; 이도권; 김홍곤; 정증현; 고민재; 김봉수; 손해정; 김진영
- CZTSSe; thin film solar cell; electrodeposition; electrochemistry; energy
conversion; solar cells; thin films
- Issue Date
- VOL 7, NO 4, 1073-1077
- Highly efficient copper–zinc–tin–selenide (Cu2ZnSnSe4; CZTSe) thin-film solar cells are prepared via the electrodepostion technique. A metallic alloy precursor (CZT) film with a Cu-poor, Zn-rich composition is directly deposited from a single aqueous bath under a constant current, and the precursor film is converted to CZTSe by annealing under a Se atmosphere at temperatures ranging from 400 °C to 600 °C. The crystallization of CZTSe starts at 400 °C and is completed at 500 °C, while crystal growth continues at higher temperatures. Owing to compromises between enhanced crystallinity and poor physical properties, CZTSe thin films annealed at 550 °C exhibit the best and most-stable device performances, reaching up to 8.0 % active efficiency; among the highest efficiencies for CZTSe thin-film solar cells prepared by electrodeposition. Further analysis of the electronic properties and a comparison with another state-of-the-art device prepared from a hydrazine-based solution, suggests that the conversion efficiency can be further improved by optimizing parameters such as film thickness, antireflection coating, MoSe2 formation, and p–n junction properties.
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