Electric-Field-Induced Spin Injection Enhancement
- Electric-Field-Induced Spin Injection Enhancement
- 박윤호; 김경호; 김형준; 장준연; 한석희; 구현철
- spin injection; local spin valve; non-local spin valve; Electric Field; interfacial spin polarization
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 14, NO 10, 7911-7914
- The spin diffusion process can be modified by the electric field in a semiconductor channel. The
electric field generated by the bias current improves the spin injection efficiency as well as the
spin diffusion length at a ferromagnet-semiconductor hybrid system. Spin-polarized electrons from the ferromagnetic electrode were electrically investigated in an inverted heterostructure with an In0 53Ga0 47As active layer. Using local and non-local spin valve geometries, the interfacial spin polarizations with and without an electric field are extracted from the magnitude of spin transport signals. The interfacial spin polarization is increased from 3.2% to 7.0% with a current of 1 mA at T = 20 K. When the electric field assists the spin injection at the junction, the interfacial spin polarization remains 7% at the temperature ranged from 20 K to 200 K. Temperature dependence of the injected polarization shows that the electric field can compensate the thermal smearing of injection efficiency even at higher temperature.
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