A comparative study of low- and high-band-gap CIxG1-xSySe2-y thin-film solar cell via solution process
- A comparative study of low- and high-band-gap CIxG1-xSySe2-y thin-film solar cell via solution process
- 박세진; 조윤애; 김동욱; 민병권
- Chalcopyrite; CIGSSe; high-band-gap; low-band-gap; solution process
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- 한국공업화학회 춘계 학술대회
- CuInxGa1-xSySe2-y (CIGSSe) thin films have been one of the most promising materials for solar cell absorber layer due to its high absorption coefficient, stable structure, and tunable band-gap. Especially, the tunability of the band-gap is an interesting aspect in the application to tandem structure. In this study, we synthesized low- and high-band-gap CIGSSe using a precursor solution-based method with multi-step heat treatment process. The CIGSSe film with different band-gaps (1.57eV and 1.12 eV) showed notable differences in grain size, surface morphology, and interfacial properties. Despite the differences, the solar cells showed similar efficiencies at 8.23% for high-band-gap and 8.81% for low-band-gap CIGSSe. By investigating the temperature-dependent transport characteristics and admittance spectra, the relationship between the structural differences and electrical properties were better understood.
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