In-situ Raman spectroscopy of current-carrying graphene microbridge
- In-situ Raman spectroscopy of current-carrying graphene microbridge
- 최민경; 손장엽; 최희채; 신현준; 이상호; 김상훈; 이수길; 김승철; 이광렬; 김상진; 홍병희; 홍종일; 양인상
- Graphene; P-doping; ab initio calculation; oxidation; in-situ Raman spectroscopy; Joule heating; doping
- Issue Date
- Journal of Raman spectroscopy : JRS
- VOL 45, NO 2, 168-172
- In-situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 108 A/cm2 in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up-shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p-doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p-doping according to our density functional theory calculation of the electronic structure.
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