In-situ Raman spectroscopy of current-carrying graphene microbridge

Title
In-situ Raman spectroscopy of current-carrying graphene microbridge
Authors
최민경손장엽최희채신현준이상호김상훈이수길김승철이광렬김상진홍병희홍종일양인상
Keywords
Graphene; P-doping; ab initio calculation; oxidation; in-situ Raman spectroscopy; Joule heating; doping
Issue Date
2014-02
Publisher
Journal of Raman spectroscopy : JRS
Citation
VOL 45, NO 2, 168-172
Abstract
In-situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3 μm × 80 μm) under electrical current density up to 2.58 × 108 A/cm2 in ambient conditions. We found that both the G and the G′ peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up-shift of the G peak and the G′ peak, after switching off the electrical current, is believed to be due to p-doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C–O and C=O bond components in the C1s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p-doping according to our density functional theory calculation of the electronic structure.
URI
http://pubs.kist.re.kr/handle/201004/47676
ISSN
03770486
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KIST Publication > Article
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