Carbon- and Oxygen-Free Cu(InGa)(SSe)2 Solar Cell with a 4.63% Conversion Efficiency by Electrostatic Spray Deposition

Title
Carbon- and Oxygen-Free Cu(InGa)(SSe)2 Solar Cell with a 4.63% Conversion Efficiency by Electrostatic Spray Deposition
Authors
Hyun YoonSeung Heon NaJae Young ChoiMin Woo KimHayong Kim안희상민병권SeJin AhnJae Ho YunJihye GwakKyungHoon YoonSanjay S. KolekarMaikel F. A. M. van HestSalem S. Al-DeyabMark T. SwihartSam S. Yoon
Keywords
CIGS; solution process; spray; solar cells; CIGSSe; thin film; electrostatic spray; carbon free; oxygen free
Issue Date
2014-06
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 6, NO 11, 8369-8377
Abstract
We have demonstrated the first example of carbon- and oxygen-free Cu(In,Ga)(SSe)2 (CIGSSe) absorber layers prepared by electrospraying a CuInGa (CIG) precursor followed by annealing, sulfurization, and selenization at elevated temperature. X-ray diffraction and scanning electron microscopy showed that the amorphous as-deposited (CIG) precursor film was converted into polycrystalline CIGSSe with a flat-grained morphology after post-treatment. The optimal post-treatment temperature was 300 °C for annealing and 500 °C for both sulfurization and selenization, with a ramp rate of 5 °C/min. The carbon impurities in the precursor film were removed by air annealing, and oxide that was formed during annealing was removed by sulfurization. The fabricated CIGSSe solar cell showed a conversion efficiency of 4.63% for a 0.44 cm2 area, with Voc = 0.4 V, Jsc = 21 mA/cm2, and FF = 0.53.
URI
http://pubs.kist.re.kr/handle/201004/47738
ISSN
19448244
Appears in Collections:
KIST Publication > Article
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