Structural and ferroelectric properties of the c-axis oriented SrBi2Ta2O9 thin films deposited by the radio-frequency magnetron sputtering
- Structural and ferroelectric properties of the c-axis oriented SrBi2Ta2O9 thin films deposited by the radio-frequency magnetron sputtering
- 송태권; 이전국; 정형진
- ferroelectric; c-axis oriented; SrBi2Ta2O9; RF sputtering
- Issue Date
- Applied physics letters
- VOL 69, NO 25, 3839-3841
- Radio-frequency magnetron sputtering was used to deposit SrBi2Ta2O9 ferroelectric thin films on Pt(111)/Ti/SiO2/Si(001) substrates. Thin films were deposited at room temperature with argon pressures of 0.5–100 mTorr and with sputtering power of 2.5 W/cm2. The crystal orientations of thin films were strongly affected by the argon pressures, the c-axis oriented SrBi2Ta2O9 thin film was obtained with argon pressure of 30 mTorr. The crystal structures of the c-axis oriented SrBi2Ta2O9 thin film were investigated by x-ray diffraction methods: θ-2θ scan, rocking curve, and Φ scans. The well aligned microstructure was observed with the average grain size of about 2000 Å in an atomic force microscopic image. Ferroelectric properties were observed for the c-axis oriented thin film: Pr*-Pr Λ and Ec were 9.7 μC/cm2 and 50 kV/cm, respectively, with excitation voltage of 3 V.
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