Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films

Title
Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films
Authors
Woojin JeonSang Ho RhaWoongkyu LeeYeon Woo YooCheol Hyun AnKwang Hwan Jung김성근Cheol Seong Hwang
Keywords
TiO2; Al-doped TiO2; Leakage current; Schottky emission; conduction band offset; oxygen vacancy
Issue Date
2014-04
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 6, NO 10, 7910-7917
Abstract
The role of Al dopant in rutile-phased TiO2 films in the evaluation of the mechanism of leakage current reduction in Al-doped TiO2 (ATO) was studied in detail. The leakage current of the ATO film was strongly affected by the Al concentration at the interface between the ATO film and the RuO2 electrode. The conduction band offset of the interface increased with the increase in the Al dopant concentration in the rutile TiO2, which reduced the leakage current in the voltage region pertinent to the next-generation dynamic random access memory application. However, the Al doping in the anatase TiO2 did not notably increase the conduction band offset even with a higher Al concentration. The detailed analyses of the leakage conduction mechanism based on the quantum mechanical transfer-matrix method showed that Schottky emission and Fowler–Nordheim tunneling was the dominant leakage conduction mechanism in the lower and higher voltage regions, respectively. The chemical analyses using X-ray photoelectron spectroscopy corroborated the electrical test results.
URI
http://pubs.kist.re.kr/handle/201004/47787
ISSN
19448244
Appears in Collections:
KIST Publication > Article
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