Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices

Title
Anomalous reduction of the switching voltage of Bi-doped Ge0.5Se0.5 ovonic threshold switching devices
Authors
서주희안형우Sang-yeol Shin정병기이수연
Keywords
ovonic threshold switching; Bi-doped GeSe; switching voltage
Issue Date
2014-04
Publisher
Applied physics letters
Citation
VOL 104, NO 15, 153503-1-153503-4
Abstract
Switching devices based on Ovonic Threshold Switching (OTS) have been considered as a solution to overcoming limitations of Si-based electronic devices, but the reduction of switching voltage is a major challenge. Here, we investigated the effect of Bi-doping in Ge 0.5Se0.5 thin films on their thermal, optical, electrical properties, as well as on the characteristics of OTS devices. As Bi increased, it was found that both of the optical energy gap (E g opt) and the depth of trap states decreased resulting in a drastic reduction of the threshold voltage (V th) by over 50%. In addition, E g opt was found to be about three times of the conduction activation energy for each composition. These results are explained in terms of the Mott delocalization effect by doping Bi.
URI
http://pubs.kist.re.kr/handle/201004/47918
ISSN
00036951
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KIST Publication > Article
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