Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 Thin Film Applied to Embedded Decoupling Capacitors

Title
Development and Electrical Properties of (Ca0.7Sr0.3) (Zr0.8Ti0.2)O3 Thin Film Applied to Embedded Decoupling Capacitors
Authors
이승환김홍기강민규강종윤이성갑이영희윤중락
Keywords
CSZT; embedded capacitor; FDE
Issue Date
2014-07
Publisher
IEEE Electron Device Letters
Citation
VOL 35, NO 7, 777-779
Abstract
A formed device embedded-type 0402 sized (Ca0.7Sr0.3)(Zr0.8Ti0.2)O3 (CSZT) embedded capacitor was fabricated for use in embedded printed circuit board. The capacitance and dielectric loss of the CSZT embedded capacitor were 406.1 pF and 0.015, respectively, at 1 MHz. The CSZT embedded capacitor exhibits stable capacitance with varying applied voltage and C Zero G (−55 °C–125 °C, delta C/C = ±30 ppm/°C) properties. The measured values of equivalent series resistance and equivalent series inductance were 6.1 and 62.39 μH, respectively. The leakage current density was 0.78 μA/cm2 at 3 V of applied voltage. These electrical properties indicate that the CSZT embedded capacitor holds promise for use as an embedded passive capacitor.
URI
http://pubs.kist.re.kr/handle/201004/47955
ISSN
07413106
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE