Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film

Title
Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film
Authors
Sang Yeol ShinRoman Golovchak이수연정병기Himanshu JainYong Gyu Choi
Keywords
amorphous chalcogenide film; EXAFS; electrical properties; switching devices
Issue Date
2014-09
Publisher
Scripta materialia
Citation
VOL 86, 56-59
Abstract
We employ EXAFS spectroscopy to refine the local atomic arrangements of evaporation-deposited equiatomic GeSe film. Amorphous structure of the as-deposited GeSe film turns out to satisfy mainly the 4:2 structural model. The crystallized GeSe film, however, consists of the orthorhombic GeSe crystals with the 3:3 atomic arrangements and quasi-crystalline Ge clusters. Its temperature-dependent electrical resistance is explained in connection with this structural difference, which exemplifies significance of the chemical environments on the electrical switching phenomena observed from amorphous chalcogenide solids.
URI
http://pubs.kist.re.kr/handle/201004/47971
ISSN
13596462
Appears in Collections:
KIST Publication > Article
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