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dc.contributor.authorR. Sathyamoorthy-
dc.contributor.authorK. M. Abhirami-
dc.contributor.authorB. Gokul-
dc.contributor.author가우탐-
dc.contributor.author채근화-
dc.contributor.authorK. Asokan-
dc.date.accessioned2015-12-03T01:18:50Z-
dc.date.available2015-12-03T01:18:50Z-
dc.date.issued201407-
dc.identifier.citationVOL 10, NO 4, 743-747-
dc.identifier.issn17388090-
dc.identifier.other42602-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/48160-
dc.description.abstractPresent study demonstrates the feasibility of using oxides of Sn to fabricate the p-n junction diode and reports the device characteristics. Reactive thermal evaporation method was used to fabricate the p-type SnO and n-type SnO2 multilayer thin films. The x-ray diffraction (XRD) and Raman spectra depict the presence of both SnO and SnO2 layers. The interface of the p-n junction analyzed by cross-sectional transmission electron microscope (TEM) images and selected area electron diffraction (SAED) pattern confirmed the presence of SnO-SnO2 layers. The diode shows rectifying current-voltage characteristics with forward threshold voltage of 3.5 V.-
dc.publisherElectronic materials letters-
dc.subjectSnO/SnO2 diode-
dc.subjectraman analysis-
dc.subjectTEM-
dc.subjectthermal evaporation-
dc.titleFabrication of p-n junction diode using SnO/SnO2 thin films and its device characteristics-
dc.typeArticle-
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