SnO2 thin films grown by atomic layer deposition using a novel Sn precursor
- SnO2 thin films grown by atomic layer deposition using a novel Sn precursor
- 최민정; 조철진; 김광천; 편정준; 박형호; 김효숙; 한정환; 김창균; 정택모; 박태주; 권범진; 정두석; 백승협; 강종윤; 김진상; 김성근
- SnO2; Atomic layer deposition; Sn(dmamp)2; self-limiting growth
- Issue Date
- Applied surface science
- VOL 320, 188-194
- SnO2 thin films were grown by atomic layer deposition (ALD) with dimethylamino-2-methyl-2-propoxy-tin(II) (Sn(dmamp)2) and O3 in a temperature range of 100–230 °C. The ALD window was found to be in the range of 100–200 °C. The growth per cycle of the films in the ALD window increased with temperature in the range from 0.018 to 0.042 nm/cycle. Above 230 °C, the self-limiting behavior which is a unique characteristic of ALD, was not observed in the growth because of the thermal decomposition of the Sn(dmamp)2 precursor. The SnO2 films were amorphous in the ALD window and exhibited quite a smooth surface. Sn ions in all films had a single binding state corresponding to Sn4+ in SnO2. The concentration of carbon and nitrogen in the all SnO2 films was below the detection limit of the auger electron spectroscopy technique and a very small amount of carbon, nitrogen, and hydrogen was detected by secondary ions mass spectroscopy only. The impurity contents decreased with increasing the growth temperature. This is consistent with the increase in the density of the SnO2 films with respect to the growth temperature. The ALD process with Sn(dmamp)2 and O3 shows excellent conformality on a hole structure with an aspect ratio of ∼9. This demonstrates that the ALD process with Sn(dmamp)2 and O3 is promising for growth of robust and highly pure SnO2 films.
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