Experimental demonstration of a ferroelectric FET using paper substrate

Title
Experimental demonstration of a ferroelectric FET using paper substrate
Authors
Changhwan ShinGwang-Geun LeeDae-Hee HanSeung-Pil HanEisuke TokumitsuShun-Ichiro OhmiDong-Joo KimHiroshi IshiwaraMinseo ParkSeung-Hyun KimWan-Gyu Lee황윤정Byung-Eun Park
Keywords
ferroelectric transistor; paper substrate; P(VDF-TrFE); P3HT
Issue Date
2014-07
Publisher
IEICE Electronics Express
Citation
VOL 11, NO 14, 20140447-1-20140447-5
Abstract
A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ∼20 V for the transistor on paper. An on/off current ratio of ∼102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).
URI
http://pubs.kist.re.kr/handle/201004/48285
ISSN
13492543
Appears in Collections:
KIST Publication > Article
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