ferroelectric transistor; paper substrate; P(VDF-TrFE); P3HT
IEICE Electronics Express
VOL 11, NO 14, 20140447-1-20140447-5
A ferroelectric field-effect transistor on a cellulose paper for nonvolatile memory application is fabricated by a low-cost solution-based-only fabrication process. A ferroelectric material, poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)), is used to obtain a wide threshold voltage (VTH) window of ∼20 V for the transistor on paper. An on/off current ratio of ∼102 is also obtained with a semiconducting channel material, Poly(3-hexylthiophene) (P3HT).