High Crystalline Dithienosilole-Cored Small Molecule Semiconductor for Ambipolar Transistor and Nonvolatile Memory

Title
High Crystalline Dithienosilole-Cored Small Molecule Semiconductor for Ambipolar Transistor and Nonvolatile Memory
Authors
강웅기정민우차원석장석재윤영운김현정손해정이도권김봉수조정호
Keywords
Donor-acceptor-type small molecules; ambipolar field effect transistor; nonvolatile memory; crystallinity; hole mobility; charge trapping
Issue Date
2014-05
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 6, NO 9, 6589-6597
Abstract
We characterized the electrical properties of a field-effect transistor (FET) and a nonvolatile memory device based on a solution-processable low bandgap small molecule, Si1TDPP-EE-C6. The small molecule consisted of electron-rich thiophene-dithienosilole-thiophene (Si1T) units and electron-deficient diketopyrrolopyrrole (DPP) units. The as-spun Si1TDPP-EE-C6 FET device exhibited ambipolar transport properties with a hole mobility of 7.3 × 10–5 cm2/(V s) and an electron mobility of 1.6 × 10–5 cm2/(V s). Thermal annealing at 110 °C led to a significant increase in carrier mobility, with hole and electron mobilities of 3.7 × 10–3 and 5.1 × 10–4 cm2/(Vs), respectively. This improvement is strongly correlated with the increased film crystallinity and reduced π–π intermolecular stacking distance upon thermal annealing, revealed by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM) measurements. In addition, nonvolatile memory devices based on Si1TDPP-EE-C6 were successfully fabricated by incorporating Au nanoparticles (AuNPs) as charge trapping sites at the interface between the silicon oxide (SiO2) and cross-linked poly(4-vinylphenol) (cPVP) dielectrics. The device exhibited reliable nonvolatile memory characteristics, including a wide memory window of 98 V, a high on/off-current ratio of 1 × 103, and good electrical reliability. Overall, we demonstrate that donor–acceptor-type small molecules are a potentially important class of materials for ambipolar FETs and nonvolatile memory applications.
URI
http://pubs.kist.re.kr/handle/201004/48380
ISSN
19448244
Appears in Collections:
KIST Publication > Article
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