Thermal analysis of self-heating in saddle MOSFET devices

Title
Thermal analysis of self-heating in saddle MOSFET devices
Authors
오현곤정철현조일환
Keywords
MOSFET; self-heating effects; Simulation; saddle structure
Issue Date
2014-02
Publisher
Japanese Journal of Applied Physics, Part 1- Regular Papers
Citation
VOL 53, NO 2, 020303-1-020303-3
Abstract
The self-heating effects (SHEs) of saddle metal–oxide–semiconductor field-effect transistors (MOSFETs) and gate dimensional impacts on thermal characteristics have been investigated on the basis of a realistic thermal conductivity of silicon and other materials. Thermal characteristics were analyzed by thermal resistance of Si channel. Since Si material has larger thermal conductivity than that of silicon dioxide, it is shown that the length of the side gate of saddle MOSFETs determines heat dissipation of Si channel. Side gate of saddle MOSFETs can be one of the important parameter in device optimization.
URI
http://pubs.kist.re.kr/handle/201004/48387
ISSN
00214922
Appears in Collections:
KIST Publication > Article
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