Enhancement of the Crystalline Ge Film Growth by Inductively Coupled Plasma-Assisted Pulsed DC Sputtering

Title
Enhancement of the Crystalline Ge Film Growth by Inductively Coupled Plasma-Assisted Pulsed DC Sputtering
Authors
김은겸한승희
Keywords
Crystalline Growth; Pulsed DC Sputtering; ICP Assistance
Issue Date
2014-11
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 14, NO 11, 8567-8571
Abstract
The effect of pulsed DC sputtering on the crystalline growth of Ge thin film was investigated. Ge thin films were deposited on the glass substrates using ICP-assisted pulsed DC sputtering. The Ge target was sputtered using asymmetric bipolar pulsed DC sputtering system with and without assistance of ICP source. The pulse frequency of 200 Hz and the pulse on time of 500 μsec (duty cycle = 10%) were kept during sputtering process. Crystal structures were studied from X-ray diffraction. The X-ray diffraction patterns clearly showed crystalline film structures. The Ge thin films with randomly oriented crystalline were obtained using pulsed DC sputtering without ICP, whereas they had well aligned (220) orientation crystalline using ICP source. Moreover, the combination of ICP assistance and pulsed DC sputtering enhanced the growth of crystalline Ge thin films without hydrogen and metal by in situ deposition. The structure and lattice of the films were studied from TEM images. The cross-sectional TEM images revealed the deposited Ge films with columnar structure.
URI
http://pubs.kist.re.kr/handle/201004/48403
ISSN
15334880
Appears in Collections:
KIST Publication > Article
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