Self-assembled alkane layers for high quality graphene field effect transistors

Title
Self-assembled alkane layers for high quality graphene field effect transistors
Authors
안석훈
Issue Date
2014-07
Publisher
International conference on Organized Molecular Films
Abstract
As early as 1961 it was reported, through calorimetric measurements that alkanes would spontaneously assemble into ordered arrays on suitable substrates. Great advances in the study of their structures were later achieved by the application of scanning tunneling microscopy (STM) to these molecular adsorbates physisorbed on highly oriented pyrolytic graphite (HOPG). This two-dimensional (2D) crystal engineering is applied to graphene field effect transistors (GFETs) where HOPG surface has the identical chemical structure with graphene. The structures of self-assembled alkanes on graphene/SiO2 were examined by STM and TEM. In addition, the device performance of GFETs under ambient conditions was dramatically improved after the deposition of alkanes. The alkane layers on GFETs not only effectively block the outside dopants such as water and oxygen but also enhance homogeneity of graphene, resulting in high carrier mobility.
URI
http://pubs.kist.re.kr/handle/201004/48470
Appears in Collections:
KIST Publication > Conference Paper
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