Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing

Title
Rapid Activation of Phosphorous-Implanted Polycrystalline Si Thin Films on Glass Substrates Using Flash-Lamp Annealing
Authors
Jeong-Wan ChoiWeon-Bum JinSeung-Muk BaeYil-Hwan YouHyoung-June KimByeong-Kook KimYongwoo KwonSeungho ParkJin-Ha Hwang
Keywords
Flash-lamp annealing
Issue Date
2014-11
Publisher
ECS Journal of Solid State Science and Technology
Citation
VOL 3, NO 11, P391-P395
Abstract
Intense visible light irradiation was applied to phosphorous-implanted polycrystalline Si thin films on glass substrates, which exhibited strong absorption features due to their amorphization by the application of a large implantation dose. Despite the short pulse duration of the visible light, the use of a high-powered and subsequently intensifiedXe arc lamp allowed for significant electrical activation even at near-ambient temperatures and above, surpassing the efficacy of conventional thermal activation processes. Using a simple optical-thermal model, theoretical predictions indicate that the instantaneous temperatures of the phosphorous-implanted Si thin films reach approximately 680◦C under the irradiation of a short pulse of light with a half maximum of 400 μsec, allowing for short- and long-range rearrangements of the implanted dopants and displaced Si atoms through diffusions enhanced through the high fraction of grain boundaries in the polycrystalline Si thin films.
URI
http://pubs.kist.re.kr/handle/201004/48489
ISSN
21628777
Appears in Collections:
KIST Publication > Article
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