Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin
- Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin
- Woori Do; Won-Beom Jin; Jungwan Choi; Seung-Muk Bae; Hyoung-June Kim; Byung-Kuk Kim; Seungho Park; Jin-Ha Hwang
- Boron; Flash lamp annealing; Ion activation; Polycrystalline Si thin
- Issue Date
- Materials research bulletin
- VOL 58, 164-168
- Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin
films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.
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