Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films

Title
Effect of flash lamp annealing on electrical activation in boron-implanted polycrystalline Si thin films
Authors
Woori DoWon-Beom JinJungwan ChoiSeung-Muk BaeHyoung-June KimByung-Kuk KimSeungho ParkJin-Ha Hwang
Keywords
Boron; Flash lamp annealing; Ion activation; Polycrystalline Si thin films
Issue Date
2014-10
Publisher
Materials research bulletin
Citation
VOL 58, 164-168
Abstract
Boron-implanted polycrystalline Si thin films on glass substrates were subjected to a short duration (1 ms) of intense visible light irradiation generated via a high-powered Xe arc lamp. The disordered Si atomic structure absorbs the intense visible light resulting from flash lamp annealing. The subsequent rapid heating results in the electrical activation of boron-implanted Si thin films, which is empirically observed using Hall measurements. The electrical activation is verified by the observed increase in the crystalline component of the Si structures resulting in higher transmittance. The feasibility of flash lamp annealing has also been demonstrated via a theoretical thermal prediction, indicating that the flash lamp annealing is applicable to low-temperature polycrystalline Si thin films.
URI
http://pubs.kist.re.kr/handle/201004/48492
ISSN
00255408
Appears in Collections:
KIST Publication > Article
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