Low gain threshold density of a single InGaP quantum well sandwiched by digital alloy
- Low gain threshold density of a single InGaP quantum well sandwiched by digital alloy
- B Kim; K Kyhm; KC Je; 송진동; SY Kim; EH Lee; RA Taylor
- InGaP; digital alloy
- Issue Date
- Current applied physics
- VOL 14, NO 9, 1293-1295
- A single In0.49Ga0.51P quantum well sandwiched by In0.49Ga0.51P/In0.49(Ga0.6Al0.4)0.51P digital alloy structures was investigated in terms of optical modal gain, where gain saturation effects were also considered for both changes in wavelength and stripe length by using a modal gain contour map analysis. We found the gain threshold density is considerably lower by an order of magnitude when compared to the Mott density (∼2 × 1012 cm−2), which can be attributed to a carrier-harvesting effect through the mini-band of the digital alloy.
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