Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices

Title
Influence of InAs quantum dots on the transport properties of GaAs-based solar cell devices
Authors
Haeri Kim박문호박성준김호성송진동김상혁Hogyoung Kim최원준Dong-Wook Kim
Keywords
solar cell; InAs QDs; Quantum dots; Trap states
Issue Date
2014-02
Publisher
Current applied physics
Citation
VOL 14, NO 2, 192-195
Abstract
We investigated both the photovoltaic and transport properties of GaAs based solar cells with and without InAs quantum dots (QDs). In small forward bias region, humps in the local ideality factor are found in the QD-embedded devices at low temperatures. This might be caused by the charges captured in the QD-induced defect states. The temperature dependence of the ideality factor, extracted from large voltage regions, was well explained by the tunneling-mediated interface recombination process. The reverse-bias current also exhibited a signature of trap-mediated tunneling. All these results suggested that the presence of trap states could cause the degraded photovoltaic performance of our QD-embedded solar cells.
URI
http://pubs.kist.re.kr/handle/201004/48510
ISSN
15671739
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE