Nonvolatile Resistance Switching on Two-dimensional Electron gas

Title
Nonvolatile Resistance Switching on Two-dimensional Electron gas
Authors
정진관김신익문선영김대홍권효진홍성현장혜정황진하권범진김성근최지원윤석진강종윤유광수김진상백승협
Keywords
two-dimensional electron gas; resistance switching; complex oxide; nonvolatile memory; heterointerface
Issue Date
2014-09
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 6, 17785-17791
Abstract
Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal−insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5−y/Ta2O5−x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10−13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.
URI
http://pubs.kist.re.kr/handle/201004/48518
ISSN
19448244
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE