Large-area monolayer hexagonal boron nitride on Pt foil

Title
Large-area monolayer hexagonal boron nitride on Pt foil
Authors
박지훈Jin Cheol ParkSeok Joon YunHyun KimDinh Hoa Luong김수민Soo Ho ChoiWoochul YangJing Kong김기강이영희
Keywords
Boron Nitride; 2Dimensional; chemical vapor deposition; hexagonal boron nitride; borazine; platinum foil; nematic liquid crystal
Issue Date
2014-08
Publisher
ACS Nano
Citation
VOL 8, NO 8, 8520-8528
Abstract
Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for twodimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. Here, we report the systematical study of h-BN growth on Pt foil by using low pressure chemical vapor deposition with a borazine source. The monolayer h-BN film was obtained over the whole Pt foil (2 5 cm2) under <100 mTorr, where the size is limited only by the Pt foil size. A borazine source was catalytically decomposed on the Pt surface, leading to the self-limiting growth of the monolayer without the associating precipitation, which is very similar to the growth of graphene on Cu. The orientation of the h-BN domains was largely confined by the Pt domain, which is confirmed by polarizing optical microscopy (POM) assisted by the nematic liquid crystal (LC) film. The total pressure and orientation of the Pt lattice plane are crucial parameters for thickness control. At high pressure (∼0.5 Torr), thick film was grown on Pt (111), and in contrast, thin film was grown on Pt (001). Our advances in monolayer h-BN growth will play an important role to further develop a high quality h-BN film that can be used for vertical tunneling, optoelectronic devices and growth templates for a variety of heterostructures.
URI
http://pubs.kist.re.kr/handle/201004/48539
ISSN
19360851
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