Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)

Title
Scaling Down Characteristics of Vertical Channel Phase Change Random Access Memory (VPCRAM)
Authors
박춘웅박종대최우용서동선정철현조일환
Keywords
Random Access Memory; MOSFET; phase change material; finite element analysis; scaling down; Phase change RAM
Issue Date
2014-02
Publisher
Journal of semiconductor technology and science
Citation
VOL 14, NO 1, 48-52
Abstract
In this paper, scaling down characteristics of vertical channel phase random access memory are investigated with device simulator and finite element analysis simulator. Electrical properties of select transistor are obtained by device simulator and those of phase change material are obtained by finite element analysis simulator. From the fusion of both data, scaling properties of vertical channel phase change random access memory (VPCRAM) are considered with ITRS roadmap. Simulation of set reset current are carried out to analyze the feasibility of scaling down and compared with values in ITRS roadmap. Simulation results show that width and length ratio of the phase change material (PCM) is key parameter of scaling down in VPCRAM. Thermal simulation results provide the design guideline of VPCRAM. Optimization of phase change material in VPCRAM can be achieved by oxide sidewall process optimization.
URI
http://pubs.kist.re.kr/handle/201004/48583
ISSN
15981657
Appears in Collections:
KIST Publication > Article
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