Few-layer black phosphorus field-effect transistors with reduced current fluctuation

Title
Few-layer black phosphorus field-effect transistors with reduced current fluctuation
Authors
나준홍이영택임정아황도경김규태최원국송용원
Keywords
Phosphorene; black phosphorus; low-frequency noise; Al2O3; passivation
Issue Date
2014-11
Publisher
ACS Nano
Citation
VOL 8, NO 11, 11753-11762
Abstract
We investigated the reduction of current fluctuations in few-layer black phosphorus (BP) field-effect transistors resulting from Al2O3 passivation. In order to verify the effect of Al2O3 passivation on device characteristics, measurements and analyses were conducted on thermally annealed devices before and after the passivation. More specifically, static and low-frequency noise analyses were used in monitoring the charge transport characteristics in the devices. The carrier number fluctuation (CNF) model, which is related to the charge trapping/detrapping process near the interface between the channel and gate dielectric, was employed to describe the current fluctuation phenomena. Noise reduction due to the Al2O3 passivation was expressed in terms of the reduced interface trap density values Dit and Nit, extracted from the subthreshold slope (SS) and the CNF model, respectively. The deviations between the interface trap density values extracted using the SS value and CNF model are elucidated in terms of the role of the Schottky barrier between the few-layer BP and metal contact. Furthermore, the preservation of the Al2O3-passivated few-layer BP flakes in ambient air for two months was confirmed by identical Raman spectra.
URI
http://pubs.kist.re.kr/handle/201004/48591
ISSN
19360851
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KIST Publication > Article
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