Deposition Behavior of Boron Carbide Thin Film Deposited by Unbalanced Magnetron Sputtering Method

Title
Deposition Behavior of Boron Carbide Thin Film Deposited by Unbalanced Magnetron Sputtering Method
Authors
배경은박종극이욱성백영준
Keywords
boron carbide; sputtering; thin films; hardness; crystallization; transmission electron microscopy
Issue Date
2014-12
Publisher
대한금속 . 재료학회지; Korean journal of metals and materials
Citation
VOL 52, NO 12, 969-974
Abstract
The effect of temperature and substrate bias on the deposition behavior of boron carbide (BC) thin film was studied. BC thin films were deposited by an unbalanced magnetron sputtering (UBM sputtering) method. The B4C target was connected to a DC power supply at 200 W and sputtered by ionized argon gas. The distance between the substrate and target was 7.5 cm and the deposition pressure was 3 mTorr with argon gas. Silicon substrates were heated by halogen lamps from room temperature to 450 ℃. DC bias voltage applied to substrates up to ‒100 V. The deposited films showed no diffraction peak on either X-ray diffraction and transmission electron microscopy analysis, which indicated an amorphous nature of the films irrespective of deposition temperature and substrate bias in this study. Only a 1280 cm‒1 absorption peak of Fourier transform infrared spectroscopy was observed. The hardness of the BC films was about 40 GPa regardless of deposition temperature.
URI
http://pubs.kist.re.kr/handle/201004/48634
ISSN
17388228
Appears in Collections:
KIST Publication > Article
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