Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum Dots
- Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum Dots
- 김수연; 송진동; 한일기; 김태환
- quantum dots; growth; annealing; optical properties; structural properties
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 14, NO 8, 5881-5884
- In0.6Al0.4As/Al0.4Ga0.6As quantum dots (QDs) were grown on GaAs (001) substrates by using molecular beam epitaxy utilizing a modified Stranski-Krastanow method. Atomic force microscopy images showed that the size of the In0.6Al0.4As QDs increased with increasing growth temperature. Photoluminescence spectra at 300 K showed that the exciton peaks corresponding to the interband transitions from the ground electronic subband to the ground heavy-hole subband (E1-HH1) of the In0.6Al0.4As/Al0.4Ga0.6As QDs shifted to large energy side with increasing growth temperature resulting from an increase in the height of the In0.6Al0.4As QDs. While the (E1-HH1) peak position of the PL spectra shifted toward larger energy side with increasing up to an annealing temperature of 700 °C, it shifted toward lower energy above 700 °C. The structural and the optical properties of In0.6Al0.4As/Al0.4Ga0.6As QDs were affected by the growth and annealing temperatures.
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