Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation

Title
Physical understanding of electron mobility in asymmetrically strained InGaAs-on-insulator metal-oxide-semiconductor field-effect transistors fabricated by lateral strain relaxation
Authors
김상현Masafumi YokoyamaYuki IkkuRyosho NakaneOsamu IchikawaTakenori OsadaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2014-03
Publisher
Applied physics letters
Citation
VOL 104, NO 11, 113509-1-113509-4
Abstract
In this paper, we fabricated asymmetrically tensile-strained In0.53Ga0.47As-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs) using a lateral strain relaxation technique. A stripe-like line structure, fabricated in biaxially strained In0.53Ga0.47As-OI can lead to the lateral strain relaxation and asymmetric strain configuration in In0.53Ga0.47As-OI with the channel width of 100 nm. We have found that the effective mobility (leff) enhancement in In0.53Ga0.47As-OI MOSFETs with uniaxial-like asymmetric strain becomes smaller than that in In0.53Ga0.47As-OI MOSFETs with biaxial strain. We have clarified from a systematic analysis between the strain values and the leff characteristics that this mobility behavior can be understood by the change of the energy level of the conduction band minimum due to the lateral strain relaxation.
URI
http://pubs.kist.re.kr/handle/201004/48745
ISSN
00036951
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