Growth of p-type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O

Title
Growth of p-type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
Authors
Jeong Hwan HanYoon Jang ChungBo Keun Park김성근Hyo-Suk KimChang Gyoun KimTaek-Mo Chung
Issue Date
2014-11
Publisher
Chemistry of materials
Citation
VOL 26, NO 21, 6088-6091
Abstract
In summary, we successfully developed an ALD process for single-phase SnO films with negligible impurity levels at low deposition temperatures of 90−210 °C from the bis(1-dimethyamino-2-methyl-2propoxy)tin(II) precursor and H2O. The SnO ALD exhibited self-limiting growth behavior with excellent conformality. The growth rates of the p-type SnO film were varied from 0.61 to 0.08 Å/cycle with increasing the growth temperature from 90 to 210 °C. XRD and TEM images revealed that (001) textured crystalline SnO was deposited at growth temperatures over 150 °C, whereas amorphous SnO film was grown below 120 °C. SnO ALD films showed p-type conductivity under a wide range of deposition conditions and quite reasonable Hall mobility values of 0.4−2.9 cm2/(V·s).
URI
http://pubs.kist.re.kr/handle/201004/48771
ISSN
08974756
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