Growth of p-type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
- Growth of p-type Tin(II) Monoxide Thin Films by Atomic Layer Deposition from Bis(1-dimethylamino-2-methyl-2propoxy)tin and H2O
- Jeong Hwan Han; Yoon Jang Chung; Bo Keun Park; 김성근; Hyo-Suk Kim; Chang Gyoun Kim; Taek-Mo Chung
- Issue Date
- Chemistry of materials
- VOL 26, NO 21, 6088-6091
- In summary, we successfully developed an ALD process for single-phase SnO films with negligible impurity levels at low deposition temperatures of 90−210 °C from the bis(1-dimethyamino-2-methyl-2propoxy)tin(II) precursor and H2O. The SnO ALD exhibited self-limiting growth behavior with excellent conformality. The growth rates of the p-type SnO film were varied from 0.61 to 0.08 Å/cycle with increasing the growth temperature from 90 to 210 °C. XRD and TEM images revealed that (001) textured crystalline SnO was deposited at growth temperatures over 150 °C, whereas amorphous SnO film was grown below 120 °C. SnO ALD films showed p-type
conductivity under a wide range of deposition conditions and quite reasonable Hall mobility values of 0.4−2.9 cm2/(V·s).
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.