Structural and Optical Properties of Pseudoternary CdxZn1-xSySe1-y Nanowires: Experimental and Computational Studies

Structural and Optical Properties of Pseudoternary CdxZn1-xSySe1-y Nanowires: Experimental and Computational Studies
Photoluminescence; Semiconductor; Nanowire; Nanosheet; Nanostructures; Empirical Pseudopontential method; bandgap; modulation; Tuning; UV-Vis
Issue Date
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2014)
Semiconductor covering wide electronic bandgap ranging from UV to VIS has been noted and used for the photovolatic materials. And the research focus on these materials is moving to the preparation of tunable-bandgap with nanostructured morphology to enhance photo-converting efficiency and lifetime of the devices. IN order to address the requirements to prepare such materials, we studied the structural and optical properties of pseudoternary CdxZn1-xSySe1-y alloy chemical compound semiconductor nanostructures synthesized by pulsed laser deposition (PLD). Experimentally, we tried to apply the spatial gradient in the synthesis temperature inside the furnace to lead the nanostructured alloy materials to have different composition, which resulted in the variation of the optical properties. As opposed to the conventional prediction on the change of the direct band gap, the alloy nanowires showed optical bowing effects, and this observation was com pared to the computer calculation based on the empirical pseudo-potential method (EPM) with super-cell approximation for the 2D (nanosheets) and 1D (nanowires) geometrically confined alloy nanostructures. We provided a simple model to explain the bowing effect based on strain relaxation mechanism, and we found that tensile and compressive ranging from 1 to 5 percent in certain directions were developed inside the nanostructure during the growth, which resulted in the optical bowing. Based on the detailed understanding of the structural and optical properties of the pseudoternary alloy nanowires, we can expect to obtain wider option to prepare and design advanced optically functional semiconductors for high efficiency photovoltaic devices of desired performances.
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