II-VI Semiconductor Nanostructures for Optoelectronic Applications
- II-VI Semiconductor Nanostructures for Optoelectronic Applications
- Semiconductor; Nanostructure; Optoelectronic
- Issue Date
- 2014 International Workshop on Future Energy Materials and Devices
- Low-dimensional semiconductor nanostructures have brought insight into advanced nanoscience and nanotechnology. The physical and chemical properties of semiconductor nanostructures depend critically on their morphology. For instance, an intense electric field resulting from a high aspect ratio of one-dimensional (1D) nanostructures enables more electrons to be emitted from the tip even when only a low voltage is applied. Photons generated by optical or electric injection are effectively confined in nanostructures by well-defined surfaces, which can be amplified by formation of internal optical cavities. It is very clear that morphology engineering is indispensable for controlling the physical properties and for enabling their practical use in various applications. In this talk, I will review our previous research on morphological control of 1D nanostructures and how the optical and electrical properties of such nanostructure-based optoelectronic devices are affected. The nanocone shape is obtained by altering the ratio of oxygen to argon gas during thermal chemical vapor deposition. The nanocones grown on Si substrates show antireflective properties in a broad spectral range. We further found that incident light was confined in the nanocones, which enhances the antireflective properties through multi-reflection/absorption. The performance dependency of a ZnO-CdTe solar cell on the morphology of ZnO was explored by introducing the nanocones. Small junction area and strong electric field at the tip of nanocones contribute to effective charge transport across the heterojunction, resulting in improved the conversion efficiency of solar cells and radiation detectors.
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