Temperature dependent Current Transport Mechanism of Graphene/Ge Schottky Barrier Diode

Title
Temperature dependent Current Transport Mechanism of Graphene/Ge Schottky Barrier Diode
Authors
Zagarzusem KhurelbaatarKim Joung-HeeChel-Jong ChoiKyu-Hwan Shim김춘근김용태
Keywords
Graphene; germanium; Schottky junction; current transport; temperature dependence
Issue Date
2014-07
Publisher
Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2014)
Abstract
We have investigated the current-voltage characteristics of graphene/Ge Schottky junctions in the temperature range of 200-400 K. Schottky barrier height (ФB) and ideality factor (n) changes from 0.92 eV and 1.1 (at 400 K) to 0.56 eV and 2.38 (at 200 K), respectively. The ФB increases with the increasing temperature whereas the n decreases. Such behavior is attributed to inhomogeneities of barrier assuming that the barrier heights have Gaussian distributions at the interface. As an evidence for the Gaussian distribution, the zero-bias ФB versus 1/2kT plot has been also discussed.
URI
http://pubs.kist.re.kr/handle/201004/48842
Appears in Collections:
KIST Publication > Conference Paper
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