Temperature dependent Current Transport Mechanism of Graphene/Ge Schottky Barrier Diode
- Temperature dependent Current Transport Mechanism of Graphene/Ge Schottky Barrier Diode
- Zagarzusem Khurelbaatar; Kim Joung-Hee; Chel-Jong Choi; Kyu-Hwan Shim; 김춘근; 김용태
- Graphene; germanium; Schottky junction; current transport; temperature dependence
- Issue Date
- Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2014)
- We have investigated the current-voltage characteristics of graphene/Ge Schottky junctions in the temperature range of 200-400 K. Schottky barrier height (ФB) and ideality factor (n) changes from 0.92 eV and 1.1 (at 400 K) to 0.56 eV and 2.38 (at 200 K), respectively. The ФB increases with the increasing temperature whereas the n decreases. Such behavior is attributed to inhomogeneities of barrier assuming that the barrier heights have Gaussian distributions at the interface. As an evidence for the Gaussian distribution, the zero-bias ФB versus 1/2kT plot has been also discussed.
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