Improvement of Multi-Level Phase Changing Properties of SbTe based Chalcogenide Material by Substituting In for Ge

Title
Improvement of Multi-Level Phase Changing Properties of SbTe based Chalcogenide Material by Substituting In for Ge
Authors
김용태김춘근최민호안진호
Keywords
Multi level cell; PCM; Neuron synapsis; Phase transition temperature
Issue Date
2014-07
Publisher
Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2014)
Abstract
For multi level cell performance and neuron synapsis network, Ge atoms are substituted with In atoms in the Sb-Te based chalcogenide material. As a result, the InSbTe shows no resistance drift and more stable phase transition behavior as well as multi level cell performance. These results are originated from the higher crystallization temperature of the IST and three different phase transition temperatures.
URI
http://pubs.kist.re.kr/handle/201004/48844
Appears in Collections:
KIST Publication > Conference Paper
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