InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
- InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
- 박민수; V. Jain; 이은혜; 김상혁; H. Petterson; 킨 왕; 송진동; 최원준
- Issue Date
- Electronics letters
- VOL 50, NO 23, 1731-1733
- High-temperature operating performance of p–i–p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p–i–p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
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