InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K

Title
InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
Authors
박민수V. Jain이은혜김상혁H. Petterson킨 왕송진동최원준
Issue Date
2014-11
Publisher
Electronics letters
Citation
VOL 50, NO 23, 1731-1733
Abstract
High-temperature operating performance of p–i–p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p–i–p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
URI
http://pubs.kist.re.kr/handle/201004/49010
ISSN
00135194
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE