Inverted CdSe@ZnS Quantum Dots Light-Emitting Diode with Low-Work Function Polyethylenimine Ethoxylated (PEIE) Surface Modifier

Title
Inverted CdSe@ZnS Quantum Dots Light-Emitting Diode with Low-Work Function Polyethylenimine Ethoxylated (PEIE) Surface Modifier
Authors
김홍희김충효황도경손동익박철민서광석최원국
Keywords
Polyethylenimine Ethoxylated; Quantum Dots Light-Emitting Diode
Issue Date
2014-07
Publisher
International Conference on Microelectronics and Plasma Technology 2014
Abstract
Over the past several years, Colloidal core/shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. An inverted-type quantum-dot light-emitting-diode(QDLED), employing low work function organic material polyethylenimine ethoxylated(PEIE) (<10 nm) as surface modifier[1], was fabricated by all solution processing method, excluding anode electrode instead of conventional metal oxide electron injection layer in the device. The PEIE layer considerably reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From the result of transmission electron microscopy (TEM), CdSe/ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QDLEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. At the operating voltage of 8 V, the QDLED device emitted spectrally orange color lights with high luminance up to 2450 cd/m2, and showed current efficiency of 0.6 cd/A.[2] Furthermore, We have sequentially studied inverted CdSe/ZnS quantum dot (QD) based light-emitting diodes (QDLED) with other nanoparticles as electron injection layer in the device as well as improved hole transporting layer (HTL) with different thickness of layer.
URI
http://pubs.kist.re.kr/handle/201004/49035
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KIST Publication > Conference Paper
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