Solution-Processed Inverted R,G,B and White Quantum Dots Light-Emitting Diode Using Polythylenimine Ethoylated Surface modification
- Solution-Processed Inverted R,G,B and White Quantum Dots Light-Emitting Diode Using Polythylenimine Ethoylated Surface modification
- 김홍희; 손동익; 황도경; 박철민; 최원국
- Solution-Processed Inverted R,G,B and White Quantum Dots Light-Emitting Diode
- Issue Date
- Nano Korea 2014
- Over the past several years, colloidal core@shell type quantum dots lighting-emitting diodes (QDLEDs) have been extensively studied and developed for the future of optoelectronic applications. In the work, we fabricate an inverted CdSe@ZnS quantum dot (QD) based light-emitting diodes (QDLED). In order to reduce work function of indium tin oxide (ITO) electrode for inverted structure, a very thin (<10 nm) polyethylenimine ethoxylated (PEIE) is used as surface modifier instead of conventional metal oxide electron injection layer. The PEIE layer substantially reduces the work function of ITO electrodes which is estimated to be 3.08 eV by ultraviolet photoemission spectroscopy (UPS). From transmission electron microscopy (TEM) study, CdSe@ZnS QDs are uniformly distributed and formed by a monolayer on PEIE layer. In this inverted QD-LEDs, blend of poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo) and poly(N,N’-bis(4-butylphenyl)-N,N’-bis(phenyl)benzidine] are used as hole transporting layer (HTL) to improve hole transporting property. In the devices of Red-Green-Blue and White, showed high luminance up to 1787, 1150, 11 and 1021 cd/m2 respectively. Also, corresponding current efficacy are 0.25, 0.18, 0.001 and 0.06 cd/A respectively.
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