Doped Tin Oxide thin films prepared by Radio-Frequency Magnetron sputtering for conducting electrode of Organic Photovoltaic's cells

Title
Doped Tin Oxide thin films prepared by Radio-Frequency Magnetron sputtering for conducting electrode of Organic Photovoltaic's cells
Authors
리나 팬디위창환임주원김정혁황도경최원국
Keywords
Doped Tin Oxide thin films; Organic Photovoltaic’s cells
Issue Date
2014-08
Publisher
한국진공학회
Abstract
Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Indium Tin Oxide (ITO), used as a transparent electrode material due to its high transmittance (>90%) and good electrical conductivity (Rs<15 Ω/sq). However, the exhaustive use of this material by the electro-optic industry, both at present and in near future, escalate its cost due to the limited resources of indium. ITO has some limitations, i.e. brittleness and high deposition temperatures, which makes it incompatible for flexible and organic material based device. Here we study about tin oxide (SnO2) and doped tin oxide thin films i.e Zinc (Zn), gallium (Ga), Antimony (Sb), manganese (Mn), and fluorine doped zinc fabricated by radio-frequency (RF) magnetron sputtering for the applications as transparent conducting oxides for organic photovoltaic’s cells. With increasing the oxygen ratio, the average optical transmittance varies 80.10% to 84.96% in the visible range (λ=380~770 nm). XRD studies reveal that all the as-deposited films grown at room temperature are found to be amorphous. Zinc tin oxide and fluorine doped zinc tin oxide shows the highest transmittance and low sheet resistance compared with other doped SnO2. Using the estimated refractive index (n) and extinction coefficient (k) values (MACLEOD simulation), we simulated the normal transmittances of multilayer thin films. Multilayer structured electrode with a few nm of Ag layer embedded in doped tin oxide was fabricated and shows the maximum optical transmittance of 88.01% in the visible range which is higher than the commercial ITO (86.62%). The bulk heterojunction organic photovoltaic’s fabricated on the multilayer electrodes exhibited a short circuit current (Jsc) of 8.11 mA/cm2, a fill factor (FF) of 0.54, an open circuit voltage (Voc) of 0.62 V and a power conversion efficiency 2.71 % which is comparable with comme
URI
http://pubs.kist.re.kr/handle/201004/49051
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KIST Publication > Conference Paper
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