Fabrication of SiOxNy barrier film for flexible organic photovoltaic by plasma enhanced chemical vapor deposition

Fabrication of SiOxNy barrier film for flexible organic photovoltaic by plasma enhanced chemical vapor deposition
진창규황도경Tae-Whan Kim김경곤최원국
SiOxNy barrier film; flexible organic photovoltaic; plasma enhanced chemical vapor deposition
Issue Date
International Conference on Microelectronics and Plasma Technology 2014
Nowadays, flexible-organic photovoltaic (F-OPV) has been extensively studied and developed for the future of optoelectronic applications due to its powerful merits of low-cost and mass product process. However organic materials could be easily damaged by oxygen and moisture atmosphere. In this study, firstly SiNx barrier film was deposited by plasma enhanced chemical vapor deposition (PECVD) and then amorphous SiOxNy was successfully obtained by subsequent dipping with SiO2 solution as a barrier film. Formation of SiOxNy was confirmed by depth profiling of x-ray photoelectron spectroscopy (XPS). Transmittance of the SiOxNy barrier film was analyzed by UV-Vis spectrophotometer and surface roughness was also examined by using scanning probe microscope (SPM). WVTR (water vapor transmission rate) was monitored by both Mocon measurement and Ca test. Based on Mocon measurement, WVTR for SiNx film and SiOxNy film were 4.2 X 10-2 g/m2/day and 7×10-3g/m2/day respectively. By Ca test, WVTR obtained by Ca test was 4 × 10-4g/m2/day. For testing the performance of the barrier film, SiOxNy on PET film was applied for OPV consisting of glass/ITO/PEDOT:PSS/P3HT:PCBM/TiO2/Al. The open circuit voltage (VOC), short circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE) were monitored as time was varied. These results was compared with the reference sample of glass encapsulated OPV. From the measurement, OPV encapsulated with SiOxNy barrier film during 600 hour showed highly endurable performance higher than 90% of that OPV with glass encapsulation.
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