Microstructure and Properties of Silicon-Incorporated DLC Film Fabricated Using HMDS Gas and RF-PECVD Process
- Microstructure and Properties of Silicon-Incorporated DLC Film Fabricated Using HMDS Gas and RF-PECVD Process
- 송병주; 송우진; 한준현; 김가람; 윤수종; 김태규; 김진권; 조현; 김긍호; 황대원; 김혜성
- Hexamethyldisilane; Radio-Frequency; Plasma-Enhanced; Chemical Vapor Deposition; Multilayered Silicon-Doped; Diamond-Like Carbon; Magnesium Alloy Substrate
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 14, NO 12, 9124-9130
- The microstructure and characteristics of silicon-incorporated diamond-like carbon film, fabricated using a radio-frequency plasma-enhanced chemical vapor deposition process with hexamethyldisilane [(CH3 3Si · Si(CH3 3:HMDS] gas as a silicon source, were investigated. Diamond-like carbon films with silicon compositions from 0 to 5 atomic percent were deposited onto ultra-fine grained AZ31 magnesium alloy substrate as buffer layers or multilayers. Si doping led not only to an increase in the bonding ratio (sp3/sp2), but improvements in hardness, critical adhesion, and corrosion resistance. Out of the investigated samples, the multi-deposited silicon diamond-like carbon thin film on magnesium substrate showed the best combination of adhesive, wear resistance, and corrosion resistance properties.
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