Influence of Shell Thickness on the Performance of Light-Emitting Devices Based on CdSe/Zn1-xCdxS Core/Shell Heterostructured Quantum Dots
- Influence of Shell Thickness on the Performance of Light-Emitting Devices Based on CdSe/Zn1-xCdxS Core/Shell Heterostructured Quantum Dots
- Jaehoon Lim; Byeong Guk Jeong; Myeongjin Park; 김재경; Jeffrey M. Pietryga; Young-Shin Park; Victor I. Klimov; Changhee Lee; Doh C. Lee; 배완기
- charging; energy transfer; light-emitting devices; efficiency roll-off; type-I heterostructures
- Issue Date
- Advanced materials
- VOL 26, NO 47, 8034-8040
- CdSe/Zn1-XCdXS core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. “Giant” CdSe/Zn1-XCdXS QDs (e.g., CdSe core radius of 2 nm and Zn1-XCdXS shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m−2) of deep-red emission, along with improved device stability.
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