Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin- Film Transistor

Title
Microwave Annealing Effect for Highly Reliable Biosensor: Dual-Gate Ion-Sensitive Field-Effect Transistor Using Amorphous InGaZnO Thin- Film Transistor
Authors
이인규이관희이석조원주
Keywords
microwave annealing; a-InGaZnO; dual gate ISFET; reliability; biosensor
Issue Date
2014-12
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 6, NO 24, 22680-22686
Abstract
We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm2/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 108. In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a highperformance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.
URI
http://pubs.kist.re.kr/handle/201004/49221
ISSN
19448244
Appears in Collections:
KIST Publication > Article
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