Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability

Title
Sub-60-nm Extremely Thin Body InxGa1-xAs-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability
Authors
김상현Masafumi YokoyamaNoriyuki TaokaRyosho NakaneTetsuji YasudaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2013-08
Publisher
IEEE transactions on electron devices
Citation
VOL 60, NO 8, 2512-2517
Abstract
We report the operation of sub-60-nm deeply scaled InGaAs- and InAs-on-insulator (-OI) MOSFETs on Si substrates with MOS interface buffer engineering and Ni-InGaAs metal source/drain (S/D). InAs-OI MOSFETs provide 400% Ion enhancement, compared with an In0.53Ga0.47As control device with the same drain-induced-barrier-lowering (DIBL) of 100 mV/V, which is attributable to the mobility enhancement and the S/D parasitic resistance (RSD) reduction. In addition, InAs-OI MOSFETs with the MOS interface buffers show excellent electrostatic characteristics. InAs-OI MOSFETs with a channel length (Lch) of 55 nm shows small DIBL of 84 mV/V and subthreshold slope (S.S.) of 105 mV/dec, both of which do not significantly degrade with a decrease of Lch, thanks to the extremely thin channel thickness. In addition, from the simulation study, we have found that further vertical scaling and back biasing techniques can improve the control of short channel effect in InAs-OI MOSFETs.
URI
http://pubs.kist.re.kr/handle/201004/49390
ISSN
00189383
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