Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain

Title
Strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors with epitaxial based biaxial strain
Authors
김상현Masafumi YokoyamaNoriyuki TaokaRyosho NakaneTetsuji TasudaOsamu IchikawaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2012-05
Publisher
Applied physics letters
Citation
VOL 100, NO 193510, 193510-1-193510-4
Abstract
We have demonstrated epitaxial-based biaxially strained In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs). Tensile strained In0.53Ga0.47As MOSFETs shows a high peak mobility of 2150 cm2/Vs with the enhancement factor of 3.7 against Si MOSFETs. Furthermore, we have investigated the mobility enhancement mechanisms in the tensile strained In0.53Ga0.47As MOSFETs. It has been found that biaxial tensile strain is effective to enhance the electron mobility in InGaAs MOSFETs by an increase of inversion carrier density, which is caused by the modulation of conduction band minimum.
URI
http://pubs.kist.re.kr/handle/201004/49391
ISSN
00036951
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KIST Publication > Article
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