1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Title
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
Authors
Rena SuzukiNoriyuki TaokaM. YokoyamaSunghoon Lee김상현Takuya HoshiiTetsuji YasudaW. JevasuwanTatsuro MaedaOsamu IchikawaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2012-03
Publisher
Applied physics letters
Citation
VOL 100, NO 132906, 1-4
URI
http://pubs.kist.re.kr/handle/201004/49392
ISSN
00036951
Appears in Collections:
KIST Publication > Article
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