Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers

Title
Electron Mobility Enhancement of Extremely Thin Body In0:7Ga0:3As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Substrates by Metal-Oxide-Semiconductor Interface Buffer Layers
Authors
김상현Masafumi YokoyamaNoriyuki TaokaRyo IidaSunghoon LeeRyosho NakaneYuji UrabeNoriyuki MiyataTetsuji YasudaHisashi YamadaNoboru FukuharaMasahiko HataMitsuru TakenakaShinichi Takagi
Issue Date
2011-12
Publisher
Applied Physics Express
Citation
VOL 5, NO 014201, 014201-1-014201-4
Abstract
The electron mobility enhancement of extremely thin body In0:7Ga0:3As-on-insulator (-OI) metal–oxide–semiconductor field-effect transistors (MOSFETs) on Si substrates by using In0:3Ga0:7As MOS interface buffer layers was demonstrated. The MOSFETs with the InGaAs thickness of 2/5/3nm have exhibited the electron mobility of 2810 cm2 V 1 s 1 with an enhancement factor of 4.2 against that of Si MOSFET. We have examined the body thickness (Tbody) dependence of the electron mobility. It was found that a channel thickness fluctuation scattering mechanism strongly affects the mobility in Tbody of around 10nm and thinner. The formation of a uniform and flat InGaAs-OI wafer is required for further improvements.
URI
http://pubs.kist.re.kr/handle/201004/49393
ISSN
18820778
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KIST Publication > Article
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