High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes

Title
High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes
Authors
최종용강웅기강보석차원석손선경윤영운김현정강영종고민재손해정조길원조정호김봉수
Keywords
ambipolar organic field-effect transistor; single layer graphene electrode; high carrier mobility; low band gap polymer; film crystallinity
Issue Date
2015-03
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 7, 6002-6012
Abstract
Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-based ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated with the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.
URI
http://pubs.kist.re.kr/handle/201004/49496
ISSN
19448244
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KIST Publication > Article
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