Characterization of efficiency-limiting resistance losses in monolithically integrated Cu(In,Ga)Se2 solar modules

Title
Characterization of efficiency-limiting resistance losses in monolithically integrated Cu(In,Ga)Se2 solar modules
Authors
윤주헌박종극김원목이진우박희선정증현
Keywords
CIGS solar cell; monolithic integrated modules; P2 contact resistance; transmission line method
Issue Date
2015-01
Publisher
Scientific Reports
Citation
VOL 5, 7690-1-7690-9
Abstract
The cell-to-module efficiency gap in Cu(In,Ga)Se2 (CIGS) monolithically integrated solar modules is enhanced by contact resistance between the Al-doped ZnO (AZO) and Mo back contact layers, the P2 contact, which connects adjacent cells. The present work evaluated the P2 contact resistance, in addition to the TCO resistance, using an embedded transmission line structure in a commercial-grade module without using special sample fabrication methods. The AZO layers between cells were not scribed; instead, the CIGS/CdS/i-ZnO/AZO device was patterned in a long stripe to permit measurement of the Mo electrode pair resistance over current paths through two P2 contacts (Mo/AZO) and along the AZO layer. The intercept and slope of the resistance as a function of the electrode interval yielded the P2 contact resistance and the TCO resistance, respectively. Calibration of the parasitic resistances is discussed as a method of improving the measurement accuracy. The contribution of the P2 contact resistance to the series resistance was comparable to that of the TCO resistance, and its origin was attributed to remnant MoSe2 phases in the P2 region, as verified by transmission electron microscopy.
URI
http://pubs.kist.re.kr/handle/201004/49524
ISSN
20452322
Appears in Collections:
KIST Publication > Article
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