In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide

Title
In0.53Ga0.47As-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Utilizing Y2O3 Buried Oxide
Authors
김상현금대명박민수최원준
Keywords
InGaAs MOSFETs; III-V MOSFETs; InGaAs-OI; wafer bondin; III-V compound semiconductor
Issue Date
2015-05
Publisher
IEEE Electron Device Letters
Citation
VOL 36, NO 5, 451-453
Abstract
In this letter, we have investigated electrical properties of metal–oxide–semiconductor (MOS) gate stack of Pt/Y2O3/In0.53Ga0.47As under different annealing conditions. We have found that proper annealing step significantly improves MOS interfacial properties of Pt/Y2O3/In0.53Ga0.47As MOS capacitors. Finally, we have realized MOS interface with a low density of trap state (Dit) of 4 × 1012 eV−1 · cm−2 and hysteresis of 15 mV using postmetallization annealing at 350 °C. Furthermore, we also first demonstrated In0.53Ga0.47As-on-insulator (-OI) transistors with Y2O3 buried oxide layer using developed MOS interface. Fabricated In0.53Ga0.47As-OI transistors show good I–V characteristics and high peak mobility of ∼2000 cm2/Vs.
URI
http://pubs.kist.re.kr/handle/201004/49564
ISSN
07413106
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KIST Publication > Article
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