Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device
- Band Gap Engineering of Boron Nitride by Graphene and Its Application as Positive Electrode Material in Asymmetric Supercapacitor Device
- Sanjit Saha; Milan Jana; KHANRA PARTHA; Pranab Samanta; 구혜영; Naresh Chandra Murmu; Tapas Kuila
- graphene; boron nitride; band gap; supercapacitor; energy density
- Issue Date
- ACS Applied Materials & Interfaces
- VOL 7, 14211-14222
- Nanostructured hexagonal boron nitride (h-BN)/reduced graphene oxide (RGO) composite is prepared by insertion of h-BN into the graphene oxide through hydrothermal reaction. Formation of the super lattice is confirmed by the existence of two separate UV−visible absorption edges corresponding to two different band gaps. The composite materials show enhanced electrical conductivity as compared to the bulk h-BN. A high specific capacitance of ∼824 F g−1 is achieved at a current density of 4 A g−1 for the composite in three-electrode electrochemical measurement. The potential window of the composite electrode lies in the range from −0.1 to 0.5 V in 6 M aqueous KOH electrolyte. The operating voltage is increased to 1.4 V in asymmetric supercapacitor (ASC) device where the thermally reduced graphene oxide is used as the negative electrode and the h-BN/RGO composite as the positive electrode. The ASC exhibits a specific capacitance of 145.7 F g−1 at a current density of 6 A g−1 and high energy density of 39.6 W h kg−1 corresponding to a large power density of ∼4200 W kg−1. Therefore, a facile hydrothermal route is demonstrated for the first time to utilize h-BN-based composite materials as energy storage electrode materials for supercapacitor applications.
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