The interfacial layer effect on bi-stable resistive switching phemomenon in MnOx thin film

Title
The interfacial layer effect on bi-stable resistive switching phemomenon in MnOx thin film
Authors
양민규김근환주현수이전국류한철
Keywords
resistive switching; MnOx thin films; Ti electrode; Pt electrode; interfacial layer effect; crossbar array
Issue Date
2015-08
Publisher
Applied physics letters
Citation
VOL 107, 0503503-1-053503-4
Abstract
Resistive switching behavior of MnOx thin films was comparatively investigated. Two different top electrode materials of Ti and Pt over the common MnOx/Pt structure showed significantly distinct electrical endurance characteristics. Various structural and electrical analyses revealed that the interfacial oxide layer associated with Ti in the Ti/MnOx/Pt structure affected the improved electrical endurance characteristic. Finally, an 8 × 8 crossbar array with 100 nm-width interconnection line was fabricated to confirm the scalability and the stability of the resistive switching performances in the Ti/MnOx/Pt structure.
URI
http://pubs.kist.re.kr/handle/201004/50107
ISSN
00036951
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE